Goford Semiconductor G5N02L

Part No.:
G5N02L
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
TO-236-3, SC-59, SOT-23-3
Datasheet:
IC-MAX.COMG5N02L.pdf
Description:
N20V, 5A, RD<18M@10V,VTH0.4V~1.0
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G5N02L Information

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Manufacturer:
Goford Semiconductor
Series:
-
Package/Case:
TO-236-3, SC-59, SOT-23-3
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 10V
Rds On (Max) @ Id, Vgs:
18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
11 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
780 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.25W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-3
Datasheet:
IC-MAX.COMG5N02L.pdf
Image G5N02L
Part Number G5N02L
Manufacturer Goford Semiconductor
Series -
Package/Case TO-236-3, SC-59, SOT-23-3
Packaging Tape & Reel (TR)
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Rds On (Max) @ Id, Vgs 18mOhm @ 4.2A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 11 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 780 pF @ 10 V
FET Feature -
Power Dissipation (Max) 1.25W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-23-3
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