Goford Semiconductor G350P02LLE

Part No.:
G350P02LLE
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
SOT-23-6
Datasheet:
IC-MAX.COMG350P02LLE.pdf
Description:
P-20V,-8.2A,RD(MAX)<[email protected],V
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Unit Price:$0

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G350P02LLE Information

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Attribute value
Manufacturer:
Goford Semiconductor
Series:
TrenchFET®
Package/Case:
SOT-23-6
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17.2 nC @ 10 V
Vgs (Max):
±10V
Input Capacitance (Ciss) (Max) @ Vds:
1126 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
1.4W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-23-6L
Datasheet:
IC-MAX.COMG350P02LLE.pdf
Image G350P02LLE G350P02LLE
Part Number G350P02LLE G350P02LLE
Manufacturer Goford Semiconductor Goford Semiconductor
Series TrenchFET® TrenchFET®
Package/Case SOT-23-6 SOT-23-6
Packaging Cut Tape (CT) Tape & Reel (TR)
Product Status Active Active
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V -
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc) 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 35mOhm @ 4A, 4.5V 35mOhm @ 4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17.2 nC @ 10 V -
Vgs (Max) ±10V ±10V
Input Capacitance (Ciss) (Max) @ Vds 1126 pF @ 10 V -
FET Feature - -
Power Dissipation (Max) 1.4W (Tc) 1.4W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package SOT-23-6L SOT-23-6L
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