Goford Semiconductor G10N10A
- Part No.:
- G10N10A
- Manufacturer:
- Goford Semiconductor
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
G10N10A.pdf
- Description:
- N100V,RD(MAX)130MOHM@10V,TO-252
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
G10N10A Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Goford Semiconductor
- Series:
- TrenchFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 10A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 130mOhm @ 2A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 15.5 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 690 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 28W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252
- Datasheet:
-
G10N10A.pdf
| Image |  |
|
| Part Number | G10N10A | G10N10A |
| Manufacturer | Goford Semiconductor | Goford Semiconductor |
| Series | TrenchFET® | TrenchFET® |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 100 V | - |
| Current - Continuous Drain (Id) @ 25°C | 10A (Tc) | 10A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V | 4.5V, 10V |
| Rds On (Max) @ Id, Vgs | 130mOhm @ 2A, 10V | 130mOhm @ 2A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 15.5 nC @ 10 V | - |
| Vgs (Max) | ±20V | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds | 690 pF @ 25 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 28W (Tc) | 28W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Surface Mount | Surface Mount |
| Supplier Device Package | TO-252 | TO-252 |
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