Goford Semiconductor G080N10T

Part No.:
G080N10T
Manufacturer:
Goford Semiconductor
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMG080N10T.pdf
Description:
MOSFET N-CH 100V 140A 236W TO-2
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Unit Price:$0

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G080N10T Information

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Manufacturer:
Goford Semiconductor
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
140A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
4.5V, 10V
Rds On (Max) @ Id, Vgs:
7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
192 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
13912 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
236W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220
Datasheet:
IC-MAX.COMG080N10T.pdf
Image G080N10T G080N10T
Part Number G080N10T G080N10T
Manufacturer Goford Semiconductor Goford Semiconductor
Series - -
Package/Case TO-220-3 TO-220-3
Packaging Tube Tube
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 180A (Tc) 140A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V 4.5V, 10V
Rds On (Max) @ Id, Vgs 7.5mOhm @ 30A, 10V 7.5mOhm @ 30A, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 107 nC @ 4.5 V 192 nC @ 10 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 13912 pF @ 50 V 13912 pF @ 50 V
FET Feature - -
Power Dissipation (Max) 370W (Tc) 236W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220 TO-220
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