Goford Semiconductor 18N20J
- Part No.:
- 18N20J
- Manufacturer:
- Goford Semiconductor
- Category:
- FETs, MOSFETs
- Package:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Datasheet:
-
18N20J.pdf
- Description:
- N200V, 18A,RD<0.16@10V,VTH1V~3V,
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
18N20J Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Goford Semiconductor
- Series:
- TrenchFET®
- Package/Case:
- TO-251-3 Short Leads, IPAK, TO-251AA
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 200 V
- Current - Continuous Drain (Id) @ 25°C:
- 18A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 160mOhm @ 9A, 10V
- Vgs(th) (Max) @ Id:
- 3V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 17.7 nC @ 10 V
- Vgs (Max):
- ±30V
- Input Capacitance (Ciss) (Max) @ Vds:
- 836 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 65.8W (Tc)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-251
- Datasheet:
-
18N20J.pdf
| Image |  |
|
| Part Number | 18N20J | 18N20J |
| Manufacturer | Goford Semiconductor | Goford Semiconductor |
| Series | TrenchFET® | TrenchFET® |
| Package/Case | TO-251-3 Short Leads, IPAK, TO-251AA | TO-251-3 Short Leads, IPAK, TO-251AA |
| Packaging | Tube | Tube |
| Product Status | Active | Active |
| FET Type | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 200 V | - |
| Current - Continuous Drain (Id) @ 25°C | 18A (Tc) | 18A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 10V |
| Rds On (Max) @ Id, Vgs | 160mOhm @ 9A, 10V | 160mOhm @ 9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250µA | 3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 17.7 nC @ 10 V | - |
| Vgs (Max) | ±30V | ±30V |
| Input Capacitance (Ciss) (Max) @ Vds | 836 pF @ 25 V | - |
| FET Feature | - | - |
| Power Dissipation (Max) | 65.8W (Tc) | 65.8W (Tc) |
| Operating Temperature | -55°C ~ 150°C (TJ) | -55°C ~ 150°C (TJ) |
| Grade | - | - |
| Qualification | - | - |
| Mounting Type | Through Hole | Through Hole |
| Supplier Device Package | TO-251 | TO-251 |
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