Global Power Technology-GPT G3S06504C
- Part No.:
- G3S06504C
- Manufacturer:
- Global Power Technology-GPT
- Category:
- Single Diodes
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
G3S06504C.pdf
- Description:
- DIODE SIL CARB 650V 11.5A TO252
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
G3S06504C Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Global Power Technology-GPT
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 11.5A
- Voltage - Forward (Vf) (Max) @ If:
- 1.7 V @ 4 A
- Speed:
- No Recovery Time > 500mA (Io)
- Reverse Recovery Time (trr):
- 0 ns
- Current - Reverse Leakage @ Vr:
- 50 µA @ 650 V
- Capacitance @ Vr, F:
- 181pF @ 0V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Datasheet:
-
G3S06504C.pdf
| Image |  |
| Part Number | G3S06504C |
| Manufacturer | Global Power Technology-GPT |
| Series | - |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 11.5A |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 4 A |
| Speed | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 181pF @ 0V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | TO-252 |
| Operating Temperature - Junction | -55°C ~ 175°C |
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