GeneSiC Semiconductor MUR20010CTR
- Part No.:
- MUR20010CTR
- Manufacturer:
- GeneSiC Semiconductor
- Category:
- Diode Arrays
- Package:
- Twin Tower
- Datasheet:
-
MUR20010CTR.pdf
- Description:
- DIODE MODULE GP 100V 100A 2TOWER
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
MUR20010CTR Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- GeneSiC Semiconductor
- Series:
- -
- Package/Case:
- Twin Tower
- Packaging:
- Bulk
- Product Status:
- Active
- Diode Configuration:
- 1 Pair Common Anode
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 100 V
- Current - Average Rectified (Io) (per Diode):
- 100A
- Voltage - Forward (Vf) (Max) @ If:
- 1.3 V @ 100 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 75 ns
- Current - Reverse Leakage @ Vr:
- 25 µA @ 50 V
- Operating Temperature - Junction:
- -55°C ~ 150°C
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Chassis Mount
- Supplier Device Package:
- Twin Tower
- Datasheet:
-
MUR20010CTR.pdf
| Image |  |
| Part Number | MUR20010CTR |
| Manufacturer | GeneSiC Semiconductor |
| Series | - |
| Package/Case | Twin Tower |
| Packaging | Bulk |
| Product Status | Active |
| Diode Configuration | 1 Pair Common Anode |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) | 100 V |
| Current - Average Rectified (Io) (per Diode) | 100A |
| Voltage - Forward (Vf) (Max) @ If | 1.3 V @ 100 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | 75 ns |
| Current - Reverse Leakage @ Vr | 25 µA @ 50 V |
| Operating Temperature - Junction | -55°C ~ 150°C |
| Grade | - |
| Qualification | - |
| Mounting Type | Chassis Mount |
| Supplier Device Package | Twin Tower |
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