GeneSiC Semiconductor MBRT60045

Part No.:
MBRT60045
Manufacturer:
GeneSiC Semiconductor
Category:
Diode Arrays
Package:
Three Tower
Datasheet:
IC-MAX.COMMBRT60045.pdf
Description:
DIODE MOD SCHOTT 45V 300A 3TOWER
Quantity:

Unit Price:$0

Ext Price:$0

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MBRT60045 Information

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Attribute value
Manufacturer:
GeneSiC Semiconductor
Series:
-
Package/Case:
Three Tower
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Common Cathode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
45 V
Current - Average Rectified (Io) (per Diode):
300A
Voltage - Forward (Vf) (Max) @ If:
750 mV @ 300 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
1 mA @ 20 V
Operating Temperature - Junction:
-55°C ~ 150°C
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Three Tower
Datasheet:
IC-MAX.COMMBRT60045.pdf
Image MBRT60045RL MBRT60045 MBRT60045R
Part Number MBRT60045RL MBRT60045 MBRT60045R
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor GeneSiC Semiconductor
Series - - -
Package/Case Three Tower Three Tower Three Tower
Packaging Bulk Bulk Bulk
Product Status Obsolete Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Cathode 1 Pair Common Anode
Technology Schottky Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 45 V 45 V 45 V
Current - Average Rectified (Io) (per Diode) 300A 300A 300A
Voltage - Forward (Vf) (Max) @ If 600 mV @ 300 A 750 mV @ 300 A 750 mV @ 300 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - - -
Current - Reverse Leakage @ Vr 5 mA @ 45 V 1 mA @ 20 V 1 mA @ 20 V
Operating Temperature - Junction -55°C ~ 150°C -55°C ~ 150°C -55°C ~ 150°C
Grade - - -
Qualification - - -
Mounting Type Chassis Mount Chassis Mount Chassis Mount
Supplier Device Package Three Tower Three Tower Three Tower
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