GeneSiC Semiconductor MBR12080CT

Part No.:
MBR12080CT
Manufacturer:
GeneSiC Semiconductor
Category:
Diode Arrays
Package:
Twin Tower
Datasheet:
IC-MAX.COMMBR12080CT.pdf
Description:
DIODE MOD SCHOTT 80V 120A 2TOWER
Quantity:

Unit Price:$0

Ext Price:$0

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MBR12080CT Information

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Manufacturer:
GeneSiC Semiconductor
Series:
-
Package/Case:
Twin Tower
Packaging:
Bulk
Product Status:
Active
Diode Configuration:
1 Pair Common Anode
Technology:
Schottky
Voltage - DC Reverse (Vr) (Max):
80 V
Current - Average Rectified (Io) (per Diode):
120A (DC)
Voltage - Forward (Vf) (Max) @ If:
840 mV @ 60 A
Speed:
Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
3 mA @ 20 V
Operating Temperature - Junction:
-
Grade:
-
Qualification:
-
Mounting Type:
Chassis Mount
Supplier Device Package:
Twin Tower
Datasheet:
IC-MAX.COMMBR12080CT.pdf
Image MBR12080CT MBR12080CTR
Part Number MBR12080CT MBR12080CTR
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor
Series - -
Package/Case Twin Tower Twin Tower
Packaging Bulk Bulk
Product Status Active Active
Diode Configuration 1 Pair Common Anode 1 Pair Common Cathode
Technology Schottky Schottky
Voltage - DC Reverse (Vr) (Max) 80 V 80 V
Current - Average Rectified (Io) (per Diode) 120A (DC) 120A (DC)
Voltage - Forward (Vf) (Max) @ If 840 mV @ 60 A 840 mV @ 60 A
Speed Fast Recovery =< 500ns, > 200mA (Io) Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr) - -
Current - Reverse Leakage @ Vr 3 mA @ 20 V 3 mA @ 20 V
Operating Temperature - Junction - -
Grade - -
Qualification - -
Mounting Type Chassis Mount Chassis Mount
Supplier Device Package Twin Tower Twin Tower
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