GeneSiC Semiconductor GC15MPS12-220

Part No.:
GC15MPS12-220
Manufacturer:
GeneSiC Semiconductor
Category:
Single Diodes
Package:
TO-220-2
Datasheet:
IC-MAX.COMGC15MPS12-220.pdf
Description:
DIODE SIL CARB 1.2KV 82A TO220-2
Quantity:

Unit Price:$0

Ext Price:$0

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GC15MPS12-220 Information

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Attribute value
Manufacturer:
GeneSiC Semiconductor
Series:
SiC Schottky MPS™
Package/Case:
TO-220-2
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
82A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 15 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
14 µA @ 1200 V
Capacitance @ Vr, F:
1089pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-2
Operating Temperature - Junction:
-55°C ~ 175°C
Datasheet:
IC-MAX.COMGC15MPS12-220.pdf
Image GC15MPS12-220 GC15MPS12-247
Part Number GC15MPS12-220 GC15MPS12-247
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor
Series SiC Schottky MPS™ SiC Schottky MPS™
Package/Case TO-220-2 TO-247-2
Packaging Tube Tube
Product Status Obsolete Obsolete
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 82A 75A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 15 A 1.8 V @ 15 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 14 µA @ 1200 V 14 µA @ 1200 V
Capacitance @ Vr, F 1089pF @ 1V, 1MHz 1089pF @ 1V, 1MHz
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-2 TO-247-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
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