GeneSiC Semiconductor GC10MPS12-252

Part No.:
GC10MPS12-252
Manufacturer:
GeneSiC Semiconductor
Category:
Single Diodes
Package:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Datasheet:
IC-MAX.COMGC10MPS12-252.pdf
Description:
DIODE SIL CARB 1.2KV 50A TO252-2
Quantity:

Unit Price:$0

Ext Price:$0

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GC10MPS12-252 Information

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Manufacturer:
GeneSiC Semiconductor
Series:
SiC Schottky MPS™
Package/Case:
TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1200 V
Current - Average Rectified (Io):
50A
Voltage - Forward (Vf) (Max) @ If:
1.8 V @ 10 A
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
10 µA @ 1200 V
Capacitance @ Vr, F:
660pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-252-2
Operating Temperature - Junction:
-55°C ~ 175°C
Datasheet:
IC-MAX.COMGC10MPS12-252.pdf
Image GC10MPS12-220 GC10MPS12-252
Part Number GC10MPS12-220 GC10MPS12-252
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor
Series SiC Schottky MPS™ SiC Schottky MPS™
Package/Case TO-220-2 TO-252-3, DPAK (2 Leads + Tab), SC-63
Packaging Tube Tape & Reel (TR)
Product Status Obsolete Obsolete
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V 1200 V
Current - Average Rectified (Io) 54A 50A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 10 A 1.8 V @ 10 A
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 10 µA @ 1200 V 10 µA @ 1200 V
Capacitance @ Vr, F 660pF @ 1V, 1MHz 660pF @ 1V, 1MHz
Grade - -
Qualification - -
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-220-2 TO-252-2
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
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