GeneSiC Semiconductor GB05MPS17-263

Part No.:
GB05MPS17-263
Manufacturer:
GeneSiC Semiconductor
Category:
Single Diodes
Package:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Datasheet:
IC-MAX.COMGB05MPS17-263.pdf
Description:
DIODE SIL CARB 1.7KV 18A TO263-7
Quantity:

Unit Price:$0

Ext Price:$0

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GB05MPS17-263 Information

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Product attributes
Attribute value
Manufacturer:
GeneSiC Semiconductor
Series:
SiC Schottky MPS™
Package/Case:
TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
1700 V
Current - Average Rectified (Io):
18A
Voltage - Forward (Vf) (Max) @ If:
-
Speed:
No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr):
-
Current - Reverse Leakage @ Vr:
-
Capacitance @ Vr, F:
470pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263-7
Operating Temperature - Junction:
-55°C ~ 175°C
Datasheet:
IC-MAX.COMGB05MPS17-263.pdf
Image GB05MPS17-247 GB05MPS17-263
Part Number GB05MPS17-247 GB05MPS17-263
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor
Series SiC Schottky MPS™ SiC Schottky MPS™
Package/Case TO-247-2 TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging Tube Tube
Product Status Obsolete Obsolete
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 1700 V 1700 V
Current - Average Rectified (Io) 25A 18A
Voltage - Forward (Vf) (Max) @ If 1.8 V @ 5 A -
Speed No Recovery Time > 500mA (Io) No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns -
Current - Reverse Leakage @ Vr 6 µA @ 1700 V -
Capacitance @ Vr, F 334pF @ 1V, 1MHz 470pF @ 1V, 1MHz
Grade - -
Qualification - -
Mounting Type Through Hole Surface Mount
Supplier Device Package TO-247-2 TO-263-7
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
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