GeneSiC Semiconductor GAP3SLT33-220FP

Part No.:
GAP3SLT33-220FP
Manufacturer:
GeneSiC Semiconductor
Category:
Single Diodes
Package:
TO-220-2 Full Pack
Datasheet:
IC-MAX.COMGAP3SLT33-220FP.pdf
Description:
DIODE SIC 3.3KV 300MA TO220FP
Quantity:

Unit Price:$0

Ext Price:$0

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GAP3SLT33-220FP Information

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Attribute value
Manufacturer:
GeneSiC Semiconductor
Series:
SiC Schottky MPS™
Package/Case:
TO-220-2 Full Pack
Packaging:
Tube
Product Status:
Obsolete
Technology:
SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max):
3300 V
Current - Average Rectified (Io):
300mA
Voltage - Forward (Vf) (Max) @ If:
1.7 V @ 300 mA
Speed:
-
Reverse Recovery Time (trr):
0 ns
Current - Reverse Leakage @ Vr:
5 µA @ 3300 V
Capacitance @ Vr, F:
42pF @ 1V, 1MHz
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220FP
Operating Temperature - Junction:
-55°C ~ 175°C
Datasheet:
IC-MAX.COMGAP3SLT33-220FP.pdf
Image GAP3SLT33-214 GAP3SLT33-220FP
Part Number GAP3SLT33-214 GAP3SLT33-220FP
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor
Series SiC Schottky MPS™ SiC Schottky MPS™
Package/Case DO-214AA, SMB TO-220-2 Full Pack
Packaging Tape & Reel (TR) Tube
Product Status Active Obsolete
Technology SiC (Silicon Carbide) Schottky SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 3300 V 3300 V
Current - Average Rectified (Io) 300mA 300mA
Voltage - Forward (Vf) (Max) @ If 2.2 V @ 300 mA 1.7 V @ 300 mA
Speed - -
Reverse Recovery Time (trr) 0 ns 0 ns
Current - Reverse Leakage @ Vr 10 µA @ 3300 V 5 µA @ 3300 V
Capacitance @ Vr, F 42pF @ 1V, 1MHz 42pF @ 1V, 1MHz
Grade - -
Qualification - -
Mounting Type Surface Mount Through Hole
Supplier Device Package DO-214AA TO-220FP
Operating Temperature - Junction -55°C ~ 175°C -55°C ~ 175°C
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