GeneSiC Semiconductor GA05JT12-247

Part No.:
GA05JT12-247
Manufacturer:
GeneSiC Semiconductor
Category:
FETs, MOSFETs
Package:
TO-247-3
Description:
TRANS SJT 1200V 5A TO247AB
Quantity:

Unit Price:$0

Ext Price:$0

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GA05JT12-247 Information

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Attribute value
Manufacturer:
GeneSiC Semiconductor
Series:
-
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
-
Technology:
SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss):
1200 V
Current - Continuous Drain (Id) @ 25°C:
5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
-
Rds On (Max) @ Id, Vgs:
280mOhm @ 5A
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
-
Input Capacitance (Ciss) (Max) @ Vds:
-
FET Feature:
-
Power Dissipation (Max):
106W (Tc)
Operating Temperature:
175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AB
Image GA05JT12-263 GA05JT12-247
Part Number GA05JT12-263 GA05JT12-247
Manufacturer GeneSiC Semiconductor GeneSiC Semiconductor
Series - -
Package/Case TO-263-8, D2PAK (7 Leads + Tab), TO-263CA TO-247-3
Packaging Tube Tube
Product Status Obsolete Obsolete
FET Type - -
Technology SiC (Silicon Carbide Junction Transistor) SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss) 1200 V 1200 V
Current - Continuous Drain (Id) @ 25°C 15A (Tc) 5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - -
Rds On (Max) @ Id, Vgs - 280mOhm @ 5A
Vgs(th) (Max) @ Id - -
Gate Charge (Qg) (Max) @ Vgs - -
Vgs (Max) - -
Input Capacitance (Ciss) (Max) @ Vds - -
FET Feature - -
Power Dissipation (Max) 106W (Tc) 106W (Tc)
Operating Temperature 175°C (TJ) 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Through Hole
Supplier Device Package TO-263-7 TO-247AB
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