GaNPower GPIHV30SB5L
- Part No.:
- GPIHV30SB5L
- Manufacturer:
- GaNPower
- Category:
- FETs, MOSFETs
- Package:
- Die
- Datasheet:
-
GPIHV30SB5L.pdf
- Description:
- GANFET N-CH 1200V 30A TO263-5L
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
GPIHV30SB5L Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- GaNPower
- Series:
- -
- Package/Case:
- Die
- Packaging:
- Tube
- Product Status:
- Active
- FET Type:
- N-Channel
- Technology:
- GaNFET (Gallium Nitride)
- Drain to Source Voltage (Vdss):
- 1200 V
- Current - Continuous Drain (Id) @ 25°C:
- 30A
- Drive Voltage (Max Rds On, Min Rds On):
- 6V
- Rds On (Max) @ Id, Vgs:
- -
- Vgs(th) (Max) @ Id:
- 1.4V @ 3.5mA
- Gate Charge (Qg) (Max) @ Vgs:
- 8.25 nC @ 6 V
- Vgs (Max):
- +7.5V, -12V
- Input Capacitance (Ciss) (Max) @ Vds:
- 236 pF @ 400 V
- FET Feature:
- -
- Power Dissipation (Max):
- -
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- Die
- Datasheet:
-
GPIHV30SB5L.pdf
| Image |  |
| Part Number | GPIHV30SB5L |
| Manufacturer | GaNPower |
| Series | - |
| Package/Case | Die |
| Packaging | Tube |
| Product Status | Active |
| FET Type | N-Channel |
| Technology | GaNFET (Gallium Nitride) |
| Drain to Source Voltage (Vdss) | 1200 V |
| Current - Continuous Drain (Id) @ 25°C | 30A |
| Drive Voltage (Max Rds On, Min Rds On) | 6V |
| Rds On (Max) @ Id, Vgs | - |
| Vgs(th) (Max) @ Id | 1.4V @ 3.5mA |
| Gate Charge (Qg) (Max) @ Vgs | 8.25 nC @ 6 V |
| Vgs (Max) | +7.5V, -12V |
| Input Capacitance (Ciss) (Max) @ Vds | 236 pF @ 400 V |
| FET Feature | - |
| Power Dissipation (Max) | - |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | Die |
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