Fairchild Semiconductor HUF75631S3S

Part No.:
HUF75631S3S
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Description:
N CHANNEL ULTRAFET 100V, 33A, 4
Quantity:

Unit Price:$0

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HUF75631S3S Information

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Attribute value
Manufacturer:
Fairchild Semiconductor
Series:
UltraFET™
Package/Case:
TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
33A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
79 nC @ 20 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1220 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
120W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TO-263AB (D2PAK)
Image HUF75631S3S HUF75631S3ST
Part Number HUF75631S3S HUF75631S3ST
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Series UltraFET™ -
Package/Case TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Bulk Bulk
Product Status Active Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V 100 V
Current - Continuous Drain (Id) @ 25°C 33A (Tc) 33A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 40mOhm @ 33A, 10V 40mOhm @ 33A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 79 nC @ 20 V 79 nC @ 20 V
Vgs (Max) ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 1220 pF @ 25 V 1220 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 120W (Tc) 120W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package TO-263AB (D2PAK) TO-263 (D2PAK)
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