Fairchild Semiconductor FQU5N60CTU

Part No.:
FQU5N60CTU
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
IC-MAX.COMFQU5N60CTU.pdf
Description:
POWER FIELD-EFFECT TRANSISTOR, 2
Quantity:

Unit Price:$0

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FQU5N60CTU Information

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Manufacturer:
Fairchild Semiconductor
Series:
QFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
19 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
670 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 49W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK
Datasheet:
IC-MAX.COMFQU5N60CTU.pdf
Image FQU5N60CTU
Part Number FQU5N60CTU
Manufacturer Fairchild Semiconductor
Series QFET®
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 2.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 19 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 670 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 49W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package IPAK
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