Fairchild Semiconductor FQU1N60TU

Part No.:
FQU1N60TU
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
IC-MAX.COMFQU1N60TU.pdf
Description:
MOSFET N-CH 600V 1A IPAK
Quantity:

Unit Price:$0

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FQU1N60TU Information

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Attribute value
Manufacturer:
Fairchild Semiconductor
Series:
QFET®
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
1A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
150 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 30W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
IPAK
Datasheet:
IC-MAX.COMFQU1N60TU.pdf
Image FQU1N60TU
Part Number FQU1N60TU
Manufacturer Fairchild Semiconductor
Series QFET®
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 1A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 150 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 30W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package IPAK
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