Fairchild Semiconductor FQPF3N80CYDTU

Part No.:
FQPF3N80CYDTU
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Formed Leads
Datasheet:
IC-MAX.COMFQPF3N80CYDTU.pdf
Description:
MOSFET N-CH 800V 3A TO220F-3
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Unit Price:$0

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FQPF3N80CYDTU Information

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Manufacturer:
Fairchild Semiconductor
Series:
QFET®
Package/Case:
TO-220-3 Full Pack, Formed Leads
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
800 V
Current - Continuous Drain (Id) @ 25°C:
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
16.5 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
705 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
39W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3 (Y-Forming)
Datasheet:
IC-MAX.COMFQPF3N80CYDTU.pdf
Image FQPF3N80CYDTU
Part Number FQPF3N80CYDTU
Manufacturer Fairchild Semiconductor
Series QFET®
Package/Case TO-220-3 Full Pack, Formed Leads
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 800 V
Current - Continuous Drain (Id) @ 25°C 3A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4.8Ohm @ 1.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 16.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 705 pF @ 25 V
FET Feature -
Power Dissipation (Max) 39W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F-3 (Y-Forming)
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