Fairchild Semiconductor FQP13N06

Part No.:
FQP13N06
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMFQP13N06.pdf
Description:
MOSFET N-CH 60V 13A TO220-3
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Unit Price:$0

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FQP13N06 Information

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Product attributes
Attribute value
Manufacturer:
Fairchild Semiconductor
Series:
QFET®
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
60 V
Current - Continuous Drain (Id) @ 25°C:
13A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
135mOhm @ 6.5A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
7.5 nC @ 10 V
Vgs (Max):
±25V
Input Capacitance (Ciss) (Max) @ Vds:
310 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
45W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3
Datasheet:
IC-MAX.COMFQP13N06.pdf
Image FQP13N06 FQP13N06L
Part Number FQP13N06 FQP13N06L
Manufacturer Fairchild Semiconductor Fairchild Semiconductor
Series QFET® QFET®
Package/Case TO-220-3 TO-220-3
Packaging Tube Bulk
Product Status Obsolete Active
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60 V 60 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc) 13.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 5V, 10V
Rds On (Max) @ Id, Vgs 135mOhm @ 6.5A, 10V 110mOhm @ 6.8A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 7.5 nC @ 10 V 6.4 nC @ 5 V
Vgs (Max) ±25V ±20V
Input Capacitance (Ciss) (Max) @ Vds 310 pF @ 25 V 350 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 45W (Tc) 45W (Tc)
Operating Temperature -55°C ~ 175°C (TJ) -55°C ~ 175°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-220-3 TO-220-3
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