Fairchild Semiconductor FQN1N60CTA

Part No.:
FQN1N60CTA
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Datasheet:
IC-MAX.COMFQN1N60CTA.pdf
Description:
SMALL SIGNAL FIELD-EFFECT TRANSI
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FQN1N60CTA Information

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Manufacturer:
Fairchild Semiconductor
Series:
QFET®
Package/Case:
TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
6.2 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta), 3W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3
Datasheet:
IC-MAX.COMFQN1N60CTA.pdf
Image FQN1N60CTA
Part Number FQN1N60CTA
Manufacturer Fairchild Semiconductor
Series QFET®
Package/Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 300mA (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 11.5Ohm @ 150mA, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 6.2 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V
FET Feature -
Power Dissipation (Max) 1W (Ta), 3W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-92-3
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