Fairchild Semiconductor FDPF6N60ZUT

Part No.:
FDPF6N60ZUT
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
IC-MAX.COMFDPF6N60ZUT.pdf
Description:
MOSFET N-CH 600V 4.5A TO220F
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Unit Price:$0

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FDPF6N60ZUT Information

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Manufacturer:
Fairchild Semiconductor
Series:
UniFET™
Package/Case:
TO-220-3 Full Pack
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
20 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
865 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
33.8W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3
Datasheet:
IC-MAX.COMFDPF6N60ZUT.pdf
Image FDPF6N60ZUT
Part Number FDPF6N60ZUT
Manufacturer Fairchild Semiconductor
Series UniFET™
Package/Case TO-220-3 Full Pack
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V
Current - Continuous Drain (Id) @ 25°C 4.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2Ohm @ 2.25A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 20 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 25 V
FET Feature -
Power Dissipation (Max) 33.8W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F-3
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