Fairchild Semiconductor FDPF10N50FT

Part No.:
FDPF10N50FT
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack
Datasheet:
IC-MAX.COMFDPF10N50FT.pdf
Description:
POWER FIELD-EFFECT TRANSISTOR, 9
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Unit Price:$0

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FDPF10N50FT Information

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Manufacturer:
Fairchild Semiconductor
Series:
UniFET™
Package/Case:
TO-220-3 Full Pack
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
500 V
Current - Continuous Drain (Id) @ 25°C:
9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
42W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3
Datasheet:
IC-MAX.COMFDPF10N50FT.pdf
Image FDPF10N50FT
Part Number FDPF10N50FT
Manufacturer Fairchild Semiconductor
Series UniFET™
Package/Case TO-220-3 Full Pack
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 500 V
Current - Continuous Drain (Id) @ 25°C 9A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 850mOhm @ 4.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 1170 pF @ 25 V
FET Feature -
Power Dissipation (Max) 42W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-220F-3
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