Fairchild Semiconductor FDME0106NZT

Part No.:
FDME0106NZT
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
6-PowerUFDFN
Datasheet:
IC-MAX.COMFDME0106NZT.pdf
Description:
SMALL SIGNAL N-CHANNEL MOSFET
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Unit Price:$0

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FDME0106NZT Information

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Manufacturer:
Fairchild Semiconductor
Series:
PowerTrench®
Package/Case:
6-PowerUFDFN
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
9A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
1.8V, 4.5V
Rds On (Max) @ Id, Vgs:
18mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
8.5 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
865 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
MicroFet 1.6x1.6 Thin
Datasheet:
IC-MAX.COMFDME0106NZT.pdf
Image FDME0106NZT
Part Number FDME0106NZT
Manufacturer Fairchild Semiconductor
Series PowerTrench®
Package/Case 6-PowerUFDFN
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 9A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Rds On (Max) @ Id, Vgs 18mOhm @ 9A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.5 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 865 pF @ 10 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package MicroFet 1.6x1.6 Thin
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