Fairchild Semiconductor FDAF62N28

Part No.:
FDAF62N28
Manufacturer:
Fairchild Semiconductor
Category:
FETs, MOSFETs
Package:
TO-3P-3 Full Pack
Datasheet:
IC-MAX.COMFDAF62N28.pdf
Description:
MOSFET N-CH 280V 36A TO3PF
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Unit Price:$0

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FDAF62N28 Information

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Manufacturer:
Fairchild Semiconductor
Series:
UniFET™
Package/Case:
TO-3P-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
280 V
Current - Continuous Drain (Id) @ 25°C:
36A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
51mOhm @ 18A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
100 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
4630 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
165W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-3PF
Datasheet:
IC-MAX.COMFDAF62N28.pdf
Image FDAF62N28
Part Number FDAF62N28
Manufacturer Fairchild Semiconductor
Series UniFET™
Package/Case TO-3P-3 Full Pack
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 280 V
Current - Continuous Drain (Id) @ 25°C 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 51mOhm @ 18A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 100 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 4630 pF @ 25 V
FET Feature -
Power Dissipation (Max) 165W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-3PF
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