Diotec Semiconductor DID3A2N65

Part No.:
DID3A2N65
Manufacturer:
Diotec Semiconductor
Category:
FETs, MOSFETs
Package:
TO-251-3 Short Leads, IPAK, TO-251AA
Datasheet:
IC-MAX.COMDID3A2N65.pdf
Description:
MOSFET IPAK N 650V 3.2A
Quantity:

Unit Price:$0

Ext Price:$0

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DID3A2N65 Information

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Attribute value
Manufacturer:
Diotec Semiconductor
Series:
-
Package/Case:
TO-251-3 Short Leads, IPAK, TO-251AA
Packaging:
Bulk
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
2.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
581 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
54W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-251
Datasheet:
IC-MAX.COMDID3A2N65.pdf
Image DID3A2N65
Part Number DID3A2N65
Manufacturer Diotec Semiconductor
Series -
Package/Case TO-251-3 Short Leads, IPAK, TO-251AA
Packaging Bulk
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 2.6Ohm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 25 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 581 pF @ 25 V
FET Feature -
Power Dissipation (Max) 54W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package TO-251
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