Diotec Semiconductor DI006P02PW

Part No.:
DI006P02PW
Manufacturer:
Diotec Semiconductor
Category:
FETs, MOSFETs
Package:
8-PowerUDFN
Datasheet:
IC-MAX.COMDI006P02PW.pdf
Description:
MOSFET POWERQFN 2X2 P -20V -6A 0
Quantity:

Unit Price:$0

Ext Price:$0

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DI006P02PW Information

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Manufacturer:
Diotec Semiconductor
Series:
-
Package/Case:
8-PowerUDFN
Packaging:
Tape & Reel (TR)
Product Status:
Active
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
20 V
Current - Continuous Drain (Id) @ 25°C:
6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
2.5V, 4.5V
Rds On (Max) @ Id, Vgs:
25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id:
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
13 nC @ 4.5 V
Vgs (Max):
±12V
Input Capacitance (Ciss) (Max) @ Vds:
1242 pF @ 10 V
FET Feature:
-
Power Dissipation (Max):
2W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
8-QFN (2x2)
Datasheet:
IC-MAX.COMDI006P02PW.pdf
Image DI006P02PW
Part Number DI006P02PW
Manufacturer Diotec Semiconductor
Series -
Package/Case 8-PowerUDFN
Packaging Tape & Reel (TR)
Product Status Active
FET Type P-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 20 V
Current - Continuous Drain (Id) @ 25°C 6A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4.5V
Rds On (Max) @ Id, Vgs 25mOhm @ 6A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 13 nC @ 4.5 V
Vgs (Max) ±12V
Input Capacitance (Ciss) (Max) @ Vds 1242 pF @ 10 V
FET Feature -
Power Dissipation (Max) 2W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package 8-QFN (2x2)
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