Diodes Incorporated ZXTP2012A

Part No.:
ZXTP2012A
Manufacturer:
Diodes Incorporated
Category:
Single Bipolar Transistors
Package:
E-Line-3
Datasheet:
IC-MAX.COMZXTP2012A.pdf
Description:
TRANS PNP 60V 3.5A E-LINE
Quantity:

Unit Price:$0

Ext Price:$0

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ZXTP2012A Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
E-Line-3
Packaging:
Bulk
Product Status:
Active
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3.5 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
210mV @ 400mA, 4A
Current - Collector Cutoff (Max):
20nA
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 1A, 1V
Power - Max:
1 W
Frequency - Transition:
120MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
E-Line (TO-92 compatible)
Datasheet:
IC-MAX.COMZXTP2012A.pdf
Image ZXTP2012ASTZ ZXTP2012ASTOA ZXTP2012A
Part Number ZXTP2012ASTZ ZXTP2012ASTOA ZXTP2012A
Manufacturer Diodes Incorporated Diodes Incorporated Diodes Incorporated
Series - - -
Package/Case E-Line-3, Formed Leads E-Line-3 E-Line-3
Packaging Cut Tape (CT) Tape & Reel (TR) Bulk
Product Status Active Obsolete Active
Transistor Type PNP PNP PNP
Current - Collector (Ic) (Max) 3.5 A 3.5 A 3.5 A
Voltage - Collector Emitter Breakdown (Max) 60 V 60 V 60 V
Vce Saturation (Max) @ Ib, Ic 210mV @ 400mA, 4A 210mV @ 400mA, 4A 210mV @ 400mA, 4A
Current - Collector Cutoff (Max) 20nA (ICBO) 20nA (ICBO) 20nA
DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1A, 1V 100 @ 1A, 1V 100 @ 1A, 1V
Power - Max 1 W 1 W 1 W
Frequency - Transition 120MHz 120MHz 120MHz
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - -
Qualification - - -
Mounting Type Through Hole Through Hole Through Hole
Supplier Device Package E-Line (TO-92 compatible) E-Line (TO-92 compatible) E-Line (TO-92 compatible)
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