Diodes Incorporated ZVN2110ASTZ

Part No.:
ZVN2110ASTZ
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
E-Line-3
Datasheet:
IC-MAX.COMZVN2110ASTZ.pdf
Description:
MOSFET N-CH 100V 320MA E-LINE
Quantity:

Unit Price:$0

Ext Price:$0

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ZVN2110ASTZ Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
E-Line-3
Packaging:
Cut Tape (CT)
Product Status:
Active
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:
2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:
-
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
75 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
700mW (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
E-Line (TO-92 compatible)
Datasheet:
IC-MAX.COMZVN2110ASTZ.pdf
Image ZVN2110ASTZ
Part Number ZVN2110ASTZ
Manufacturer Diodes Incorporated
Series -
Package/Case E-Line-3
Packaging Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id 2.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs -
Vgs (Max) ±20V
Input Capacitance (Ciss) (Max) @ Vds 75 pF @ 25 V
FET Feature -
Power Dissipation (Max) 700mW (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package E-Line (TO-92 compatible)
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