Diodes Incorporated DMJ65H430SCTI

Part No.:
DMJ65H430SCTI
Manufacturer:
Diodes Incorporated
Category:
FETs, MOSFETs
Package:
TO-220-3 Full Pack, Isolated Tab
Description:
MOSFET BVDSS: 501V~650V ITO-220A
Quantity:

Unit Price:$0

Ext Price:$0

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DMJ65H430SCTI Information

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Manufacturer:
Diodes Incorporated
Series:
-
Package/Case:
TO-220-3 Full Pack, Isolated Tab
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
650 V
Current - Continuous Drain (Id) @ 25°C:
14A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
24.5 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
775 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
2.5W (Ta), 50W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
ITO220AB-N (Type HE)
Image DMJ65H430SCTI
Part Number DMJ65H430SCTI
Manufacturer Diodes Incorporated
Series -
Package/Case TO-220-3 Full Pack, Isolated Tab
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 14A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 430mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 24.5 nC @ 10 V
Vgs (Max) ±30V
Input Capacitance (Ciss) (Max) @ Vds 775 pF @ 100 V
FET Feature -
Power Dissipation (Max) 2.5W (Ta), 50W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Through Hole
Supplier Device Package ITO220AB-N (Type HE)
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