Central Semiconductor Corp CZDM1003N BK

Part No.:
CZDM1003N BK
Manufacturer:
Central Semiconductor Corp
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
IC-MAX.COMCZDM1003N BK.pdf
Description:
MOSFET N-CH 100V 3A SOT-223
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Unit Price:$0

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CZDM1003N BK Information

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Manufacturer:
Central Semiconductor Corp
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
3A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
150mOhm @ 2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
15 nC @ 10 V
Vgs (Max):
20V
Input Capacitance (Ciss) (Max) @ Vds:
975 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
2W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
SOT-223
Datasheet:
IC-MAX.COMCZDM1003N BK.pdf
Image CZDM1003N BK
Part Number CZDM1003N BK
Manufacturer Central Semiconductor Corp
Series -
Package/Case TO-261-4, TO-261AA
Packaging Tube
Product Status Obsolete
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 100 V
Current - Continuous Drain (Id) @ 25°C 3A (Ta)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 150mOhm @ 2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 15 nC @ 10 V
Vgs (Max) 20V
Input Capacitance (Ciss) (Max) @ Vds 975 pF @ 25 V
FET Feature -
Power Dissipation (Max) 2W (Ta)
Operating Temperature -55°C ~ 150°C (TJ)
Grade -
Qualification -
Mounting Type Surface Mount
Supplier Device Package SOT-223
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