Central Semiconductor Corp CTLDM8002A-M621 TR

Part No.:
CTLDM8002A-M621 TR
Manufacturer:
Central Semiconductor Corp
Category:
FETs, MOSFETs
Package:
6-PowerVFDFN
Datasheet:
IC-MAX.COMCTLDM8002A-M621 TR.pdf
Description:
MOSFET P-CH 50V 280MA TLM621
Quantity:

Unit Price:$0

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CTLDM8002A-M621 TR Information

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Manufacturer:
Central Semiconductor Corp
Series:
-
Package/Case:
6-PowerVFDFN
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
P-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
50 V
Current - Continuous Drain (Id) @ 25°C:
280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):
5V, 10V
Rds On (Max) @ Id, Vgs:
2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id:
2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
0.72 nC @ 4.5 V
Vgs (Max):
20V
Input Capacitance (Ciss) (Max) @ Vds:
70 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
900mW (Ta)
Operating Temperature:
-65°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
TLM621
Datasheet:
IC-MAX.COMCTLDM8002A-M621 TR.pdf
Image CTLDM8002A-M621 TR CTLDM8002A-M621H BK
Part Number CTLDM8002A-M621 TR CTLDM8002A-M621H BK
Manufacturer Central Semiconductor Corp Central Semiconductor Corp
Series - -
Package/Case 6-PowerVFDFN 6-XFDFN Exposed Pad
Packaging Tape & Reel (TR) Bulk
Product Status Obsolete Obsolete
FET Type P-Channel P-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 50 V 50 V
Current - Continuous Drain (Id) @ 25°C 280mA (Ta) 280mA (Ta)
Drive Voltage (Max Rds On, Min Rds On) 5V, 10V 5V, 10V
Rds On (Max) @ Id, Vgs 2.5Ohm @ 500mA, 10V 2.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id 2.5V @ 250µA 2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 0.72 nC @ 4.5 V 0.72 nC @ 4.5 V
Vgs (Max) 20V 20V
Input Capacitance (Ciss) (Max) @ Vds 70 pF @ 25 V 70 pF @ 25 V
FET Feature - -
Power Dissipation (Max) 900mW (Ta) 1.6W (Ta)
Operating Temperature -65°C ~ 150°C (TJ) -65°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Surface Mount Surface Mount
Supplier Device Package TLM621 TLM621H
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