Bourns Inc. BSDL10S65E6
- Part No.:
- BSDL10S65E6
- Manufacturer:
- Bourns Inc.
- Category:
- Single Diodes
- Package:
- 4-PowerVSFN
- Datasheet:
-
BSDL10S65E6.pdf
- Description:
- DIODE SIC SCHTKY 650V 10A DFN8X8
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
BSDL10S65E6 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Bourns Inc.
- Series:
- -
- Package/Case:
- 4-PowerVSFN
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Technology:
- SiC (Silicon Carbide) Schottky
- Voltage - DC Reverse (Vr) (Max):
- 650 V
- Current - Average Rectified (Io):
- 10A
- Voltage - Forward (Vf) (Max) @ If:
- 1.45 V @ 10 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 50 µA @ 650 V
- Capacitance @ Vr, F:
- 500pF @ 1V, 1MHz
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 5-DFN (8x8)
- Operating Temperature - Junction:
- -55°C ~ 175°C
- Datasheet:
-
BSDL10S65E6.pdf
| Image |  |
| Part Number | BSDL10S65E6 |
| Manufacturer | Bourns Inc. |
| Series | - |
| Package/Case | 4-PowerVSFN |
| Packaging | Tape & Reel (TR) |
| Product Status | Active |
| Technology | SiC (Silicon Carbide) Schottky |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Voltage - Forward (Vf) (Max) @ If | 1.45 V @ 10 A |
| Speed | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr) | - |
| Current - Reverse Leakage @ Vr | 50 µA @ 650 V |
| Capacitance @ Vr, F | 500pF @ 1V, 1MHz |
| Grade | - |
| Qualification | - |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (8x8) |
| Operating Temperature - Junction | -55°C ~ 175°C |
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