Alpha & Omega Semiconductor Inc. AOW10T60

Part No.:
AOW10T60
Manufacturer:
Alpha & Omega Semiconductor Inc.
Category:
FETs, MOSFETs
Package:
TO-262-3 Long Leads, I2PAK, TO-262AA
Datasheet:
IC-MAX.COMAOW10T60.pdf
Description:
MOSFET N-CHANNEL 600V 10A TO262
Quantity:

Unit Price:$0

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AOW10T60 Information

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Manufacturer:
Alpha & Omega Semiconductor Inc.
Series:
-
Package/Case:
TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
600 V
Current - Continuous Drain (Id) @ 25°C:
10A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
700mOhm @ 5A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
35 nC @ 10 V
Vgs (Max):
±30V
Input Capacitance (Ciss) (Max) @ Vds:
1346 pF @ 100 V
FET Feature:
-
Power Dissipation (Max):
208W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-262
Datasheet:
IC-MAX.COMAOW10T60.pdf
Image AOW10T60P AOW10T60
Part Number AOW10T60P AOW10T60
Manufacturer Alpha & Omega Semiconductor Inc. Alpha & Omega Semiconductor Inc.
Series - -
Package/Case TO-262-3 Long Leads, I2PAK, TO-262AA TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging Tube Tube
Product Status Obsolete Obsolete
FET Type N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 600 V 600 V
Current - Continuous Drain (Id) @ 25°C 10A (Tc) 10A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V 10V
Rds On (Max) @ Id, Vgs 700mOhm @ 5A, 10V 700mOhm @ 5A, 10V
Vgs(th) (Max) @ Id 5V @ 250µA 5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 40 nC @ 10 V 35 nC @ 10 V
Vgs (Max) ±30V ±30V
Input Capacitance (Ciss) (Max) @ Vds 1595 pF @ 100 V 1346 pF @ 100 V
FET Feature - -
Power Dissipation (Max) 208W (Tc) 208W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - -
Qualification - -
Mounting Type Through Hole Through Hole
Supplier Device Package TO-262 TO-262
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