FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT8024LLLGMOSFET N-CH 800V 31A TO264 Microsemi Corporation |
8,413 | - |
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- |
POWER MOS 7® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | ±30V | 4670 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-264 [L] |
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APT40SM120SSICFET N-CH 1200V 41A D3PAK Microsemi Corporation |
9,400 | - |
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- |
- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 41A (Tc) | 20V | 100mOhm @ 20A, 20V | 3V @ 1mA (Typ) | 130 nC @ 20 V | +25V, -10V | 2560 pF @ 1000 V | - | 273W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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APT8024LVRGMOSFET N-CH 800V 33A TO264 Microsemi Corporation |
4,535 | - |
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- |
POWER MOS V® | TO-264-3, TO-264AA | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 33A (Tc) | 10V | 240mOhm @ 16.5A, 10V | 4V @ 2.5mA | 425 nC @ 10 V | - | 7740 pF @ 25 V | - | - | - | - | - | Through Hole | TO-264 [L] |
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APT20M19JVRMOSFET N-CH 200V 112A ISOTOP Microsemi Corporation |
4,231 | - |
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Datasheet
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POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 200 V | 112A (Tc) | 10V | 19mOhm @ 500mA, 10V | 4V @ 1mA | 495 nC @ 10 V | ±30V | 11640 pF @ 25 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT5510JFLLMOSFET N-CH 550V 44A ISOTOP Microsemi Corporation |
2,900 | - |
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Datasheet
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POWER MOS 7® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 550 V | 44A (Tc) | 10V | 100mOhm @ 22A, 10V | 5V @ 2.5mA | 124 nC @ 10 V | ±30V | 5823 pF @ 25 V | - | 463W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT40M70JVFRMOSFET N-CH 400V 53A ISOTOP Microsemi Corporation |
4,917 | - |
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Datasheet
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POWER MOS V® | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 400 V | 53A (Tc) | 10V | 70mOhm @ 26.5A, 10V | 4V @ 2.5mA | 495 nC @ 10 V | ±30V | 8890 pF @ 25 V | - | 450W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT10043JVRMOSFET N-CH 1000V 22A ISOTOP Microsemi Corporation |
6,352 | - |
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Datasheet
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- | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 1000 V | 22A (Tj) | - | 430mOhm @ 500mA, 10V | 4V @ 1mA | 480 nC @ 10 V | - | 9000 pF @ 25 V | - | - | - | - | - | Chassis Mount | ISOTOP® |
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APT31N80JC3MOSFET N-CH 800V 31A ISOTOP Microsemi Corporation |
7,013 | - |
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Datasheet
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CoolMOS™ | SOT-227-4, miniBLOC | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 145mOhm @ 22A, 10V | 3.9V @ 2mA | 355 nC @ 10 V | ±20V | 4510 pF @ 25 V | - | 833W (Tc) | -55°C ~ 150°C (TJ) | - | - | Chassis Mount | ISOTOP® |
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APT8024B2LLGMOSFET N-CH 800V 31A T-MAX Microsemi Corporation |
5 | - |
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Datasheet
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POWER MOS 7® | TO-247-3 Variant | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 31A (Tc) | 10V | 240mOhm @ 15.5A, 10V | 5V @ 2.5mA | 160 nC @ 10 V | ±30V | 4670 pF @ 25 V | - | 565W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | T-MAX™ [B2] |
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APT70SM70JSICFET N-CH 700V 49A SOT227 Microsemi Corporation |
7,672 | - |
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- |
- | SOT-227-4, miniBLOC | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 700 V | 49A (Tc) | 20V | 70mOhm @ 32.5A, 20V | 2.5V @ 1mA | 125 nC @ 20 V | +25V, -10V | - | - | 165W (Tc) | -55°C ~ 175°C (TJ) | - | - | Chassis Mount | SOT-227 |
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