FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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全部重置
应用所有
结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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APT35SM70SSICFET 700V 35A TO247-3 Microsemi Corporation |
8,786 | - |
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Datasheet
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- | TO-247-3 | Bulk | Obsolete | - | SiCFET (Silicon Carbide) | 700 V | 35A | - | - | - | - | - | - | - | - | - | - | - | Through Hole | TO-247-3 |
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APT5SM170BSICFET N-CH 1700V 5A TO247-3 Microsemi Corporation |
9,010 | - |
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Datasheet
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- | TO-247-3 | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 5A (Tc) | 20V | 1.25Ohm @ 2.5A, 20V | 3.2V @ 500µA | 21 nC @ 20 V | +25V, -10V | 249 pF @ 1000 V | - | 65W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3 |
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APT5SM170SSICFET N-CH 1700V 4.6A D3PAK Microsemi Corporation |
8,689 | - |
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- | TO-268-3, D3PAK (2 Leads + Tab), TO-268AA | Bulk | Obsolete | N-Channel | SiCFET (Silicon Carbide) | 1700 V | 4.6A (Tc) | 20V | 1.2Ohm @ 2A, 20V | 3.2V @ 500µA | 29 nC @ 20 V | +25V, -10V | 325 pF @ 1000 V | - | 52W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | D3PAK |
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