制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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GT040N10TMOSFET N-CH 100V 140A 200W 4.5m Goford Semiconductor |
1,000 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 5920 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT045N10MMOSFET N-CH 100V 120A TO-263 Goford Semiconductor |
800 | - |
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SGT | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 120A (Tc) | 10V | 4.5mOhm @ 30A, 10V | 4V @ 250µA | - | ±20V | - | - | 180W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GC11N65MMOSFET N-CH 650V 11A TO-263 Goford Semiconductor |
800 | - |
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Cool MOS™ | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | - | 11A (Tc) | 10V | 360mOhm @ 5.5A, 10V | 4V @ 250µA | - | ±30V | - | - | 78W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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G08N02LN20V, 8A, RD<[email protected],VTH0.5V~ Goford Semiconductor |
8,946 | - |
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- | TO-236-3, SC-59, SOT-23-3 | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 8A (Tc) | 2.5V, 4.5V | 12.3mOhm @ 12A, 4.5V | 900mV @ 250µA | 22 nC @ 10 V | ±12V | 929 pF @ 10 V | - | 1.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-3 | |
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G06N02HN20V, 6A, RD<[email protected],VTH0.5V~ Goford Semiconductor |
2,096 | - |
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- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 6A (Tc) | 2.5V, 4.5V | 14.3mOhm @ 3A, 4.5V | 900mV @ 250µA | 12.5 nC @ 10 V | ±12V | 1140 pF @ 10 V | - | 1.8W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 | |
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G08N03D2N30V,8A,RD<20M@10V,VTH1.0V~2.0V, Goford Semiconductor |
8,365 | - |
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- | 6-WDFN Exposed Pad | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Tc) | 4.5V, 10V | 20mOhm @ 4A, 10V | 2V @ 250µA | 15 nC @ 10 V | ±20V | 681 pF @ 15 V | - | 17W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) | |
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2002AN190V,5A,RD<540M@10V,VTH1.0V~3.0 Goford Semiconductor |
7,467 | - |
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- | SOT-23-6 | Obsolete | N-Channel | MOSFET (Metal Oxide) | 190 V | 5A (Tc) | 4.5V, 10V | 540mOhm @ 1A, 10V | 3V @ 250µA | 16 nC @ 10 V | ±20V | 733 pF @ 100 V | - | 1.4W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23-6L | |
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G7P03D2P-30V,-7A,RD(MAX)<20.5M@-10V,VTH Goford Semiconductor |
9,882 | - |
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- | 6-WDFN Exposed Pad | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 7A (Tc) | 4.5V, 10V | 20.5mOhm @ 1A, 10V | 1.1V @ 250µA | 19 nC @ 4.5 V | ±20V | 1900 pF @ 15 V | - | 1.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 6-DFN (2x2) | |
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G08N02HN20V, 12A, RD<[email protected],VTH0.5V Goford Semiconductor |
6,927 | - |
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- | TO-261-4, TO-261AA | Active | N-Channel | MOSFET (Metal Oxide) | 20 V | 12A (Tc) | 2.5V, 4.5V | 11.3mOhm @ 1A, 4.5V | 900mV @ 250µA | 12.5 nC @ 4.5 V | ±12V | 1255 pF @ 10 V | - | 1.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-223 | |
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GT100N04KN40V,50A,RD<10M@10V,VTH1.2V~2.2V Goford Semiconductor |
2,566 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Active | N-Channel | MOSFET (Metal Oxide) | 40 V | 50A (Tc) | 4.5V, 10V | 10mOhm @ 5A, 10V | 2.2V @ 250µA | 32 nC @ 10 V | ±20V | 644 pF @ 20 V | - | 80W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 |