制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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GT042P06TMOSFET, P-CH,-60V,-160A,RD(MAX)< Goford Semiconductor |
53 | - |
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SGT | TO-220-3 | Tube | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 160A (Tc) | 4.5V, 10V | 4.5mOhm @ 15A, 10V | 2.5V @ 250µA | 305 nC @ 10 V | ±20V | 9151 pF @ 30 V | - | 280W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT040N10TMOSFET N-CH 100V 140A 200W 4.5M Goford Semiconductor |
46 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 4.5V, 10V | 4.5mOhm @ 40A, 10V | 2.5V @ 250µA | 100 nC @ 10 V | ±20V | 5920 pF @ 50 V | - | 200W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GC20N65FN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
67 | - |
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SuperJunction | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 4V @ 250µA | 39 nC @ 10 V | ±30V | 1603 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GC20N65TN650V,RD(MAX)<170M@10V,VTH2.5V~4 Goford Semiconductor |
37 | - |
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SuperJunction | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 170mOhm @ 10A, 10V | 4.5V @ 250µA | 39 nC @ 10 V | ±30V | 1724 pF @ 100 V | - | 151W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT023N10TN100V, 140A,RD<2.7M@10V,VTH2.7V~ Goford Semiconductor |
71 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 140A (Tc) | 10V | 2.7mOhm @ 20A, 10V | 4.3V @ 250µA | 90 nC @ 10 V | ±20V | 8086 pF @ 50 V | - | 500W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |
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GT038P06MMOSFET P-CH 60V 200A 350W TO-26 Goford Semiconductor |
95 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | P-Channel | MOSFET (Metal Oxide) | 60 V | 200A (Tc) | 4.5V, 10V | 4.5mOhm @ 50A, 10V | 2.5V @ 250µA | 386 nC @ 10 V | ±20V | 11988 pF @ 30 V | - | 350W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GC20N65FDMOSFET N-CH 650V 20A 40W TO-220 Goford Semiconductor |
50 | - |
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SuperJunction | TO-220-3 Full Pack | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 20A (Tc) | 10V | 190mOhm @ 10A, 10V | 5V @ 250µA | 39 nC @ 10 V | ±30V | 1729 pF @ 100 V | - | 40W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220F |
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GT035N10MN100V, 190A,RD<3.5M@10V,VTH2V~4V Goford Semiconductor |
90 | - |
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Cut Tape (CT) | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 20A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6188 pF @ 50 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-263 |
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GT035N10QMOSFET N-CH 100V 190A TO-247 Goford Semiconductor |
51 | - |
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- | TO-247-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 190A (Tc) | 10V | 3.5mOhm @ 30A, 10V | 4V @ 250µA | 68 nC @ 10 V | ±20V | 6516 pF @ 50 V | - | 277W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-247 |
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GT070N15TMOSFET N-CH 150V140A 320W TO-22 Goford Semiconductor |
50 | - |
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- | TO-220-3 | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 150 V | 140A (Tc) | 10V | 5.8mOhm @ 30A, 10V | 4V @ 250µA | 89 nC @ 10 V | ±20V | 5864 pF @ 75 V | - | 320W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-220 |