Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Configuration | FET Feature | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Input Capacitance (Ciss) (Max) @ Vds | Power - Max | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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ISG0614N06NM5HSCATMA1MOSFET 2N-CH 60V 31A 10WHITFN |
2,990 |
|
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OptiMOS™ 5 | 10-PowerWDFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 60V | 31A (Ta), 233A (Tc) | 1.6mOhm @ 50A, 10V | 3.3V @ 86µA | 102nC @ 10V | 6400pF @ 30V | 3W (Ta), 167W (Tc) | -55°C ~ 175°C (TJ) | - | - | Surface Mount | PG-WHITFN-10-1 |
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IAUTN08S5N012LATMA1MOSFET 2N-CH 80V 300A PG-HSOF |
1,956 |
|
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OptiMOS™ 5 | 8-PowerSFN | Tape & Reel (TR) | Active | MOSFET (Metal Oxide) | 2 N-Channel, Common Drain, Common Source | - | 80V | 300A (Tj) | 1.15mOhm @ 100A, 10V | 3.3V @ 275µA | 24nC @ 10V | 15340pF @ 40V | 375W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Surface Mount | PG-HSOF-8-2 |
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WI62195MOSFET 2N-CH 750V 9A 14PQFN |
1,477 |
|
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WiseGan™ | 14-PowerLDFN | Tray | Active | GaNFET (Gallium Nitride) | 2 N-Channel (Half Bridge) | - | 750V | 9A (Tj) | 250mOhm @ 2A, 6V | 1.75V @ 10mA | 1.9nC @ 6V | 53.5pF @ 400V | - | -40°C ~ 150°C (TJ) | - | - | Surface Mount | 14-PQFN (6x8) |
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NXV08A170DB2MOSFET 2N-CH 80V 200A APM12-CBA |
238 |
|
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- | 12-PowerDIP Module (1.118", 28.40mm) | Tray | Active | MOSFET (Metal Oxide) | 2 N-Channel (Half Bridge) | - | 80V | 200A (Tj) | 0.99mOhm @ 80A, 10V, 1.35mOhm @ 80A, 10V | 4V @ 250µA | 195nC @ 10V | 14000pF @ 40V | - | 175°C (TJ) | Automotive | AEC-Q100 | Through Hole | APM12-CBA |
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NVXK2TR40WXTMOSFET 4N-CH 1200V 27A APM32 |
60 |
|
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- | 32-PowerDIP Module (1.311", 33.30mm) | Tube | Active | Silicon Carbide (SiC) | 4 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 27A (Tc) | 59mOhm @ 35A, 20V | 4.3V @ 10mA | 106nC @ 20V | 1789pF @ 800V | 319W (Tc) | -55°C ~ 175°C (TJ) | Automotive | AEC-Q101 | Through Hole | APM32 |
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F435MR07W1D7S8B11ABPSA1MOSFET 4N-CH 650V 35A MODULE |
42 |
|
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EasyPACK™ 1B | Module | Tray | Active | MOSFET (Metal Oxide) | 4 N-Channel (Full Bridge) | - | 650V | 35A | 39.4mOhm @ 35A, 10V | 4.45V @ 1.74mA | 141nC @ 10V | 6950pF @ 400V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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NXH030F120M3F1PTGMOSFET 4N-CH 1200V 38A 22PIM |
26 |
|
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- | Module | Tray | Active | SiCFET (Silicon Carbide) | 4 N-Channel (Full Bridge) | Depletion Mode | 1200V (1.2kV) | 38A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | 2246pF @ 800V | 100W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
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NXH010P120M3F1PGMOSFET 2N-CH 1200V 105A |
28 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | 6451pF @ 800V | 272W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH010P120M3F1PTGMOSFET 2N-CH 1200V 105A |
27 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 105A (Tc) | 14.5mOhm @ 90A, 18V | 4.4V @ 45mA | 314nC @ 18V | 6451pF @ 800V | 272W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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FF33MR12W1M1HPB11BPSA1MOSFET |
30 |
|
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- | - | Tray | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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DF11MR12W1M1HFB67BPSA1MOSFET 1200V AG-EASY1B |
38 |
|
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CoolSiC™ | Module | Tray | Active | Silicon Carbide (SiC) | - | - | 1200V (1.2kV) | - | - | - | - | - | - | - | - | - | Chassis Mount | AG-EASY1B |
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NXH030P120M3F1PTGMOSFET 2N-CH 1200V 42A |
28 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 42A (Tc) | 38.5mOhm @ 30A, 18V | 4.4V @ 15mA | 110nC @ 18V | 2271pF @ 800V | 100W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH040P120MNF1PGMOSFET 2N-CH 1200V 30A |
28 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) Common Source | - | 1200V (1.2kV) | 30A (Tc) | 56mOhm @ 25A, 20V | 4.3V @ 10mA | 122.1nC @ 20V | 1505pF @ 800V | 74W | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | - |
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NXH008P120M3F1PTGMOSFET 2N-CH 1200V 145A |
27 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | Silicon Carbide (SiC) | 1200V (1.2kV) | 145A (Tc) | 10.9mOhm @ 120A, 18V | 4.4V @ 60mA | 419nC @ 18V | 8334pF @ 800V | 382W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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GCMX010A120B2B1PMOSFET 2N-CH 1200V 214A |
28 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 214A (Tc) | 12mOhm @ 100A, 20V | 4V @ 40mA | 476nC @ 20V | 13100pF @ 800V | 750W (Tc) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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NXH010P120MNF1PTNGMOSFET 2N-CH 1200V 114A |
28 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 2 N-Channel (Dual) | - | 1200V (1.2kV) | 114A (Tc) | 14mOhm @ 100A, 20V | 4.3V @ 40mA | 454nC @ 20V | 4707pF @ 800V | 250W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | - |
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CAB016M12FM3TMOSFET 2N-CH 1200V 78A MODULE |
30 |
|
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- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 78A (Tj) | 21.3mOhm @ 80A, 15V | 3.6V @ 23mA | 236nC @ 15V | 6600pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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NXH020F120MNF1PGMOSFET 4N-CH 1200V 51A 22PIM |
28 |
|
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- | Module | Tray | Active | Silicon Carbide (SiC) | 4 N-Channel (Full Bridge) | - | 1200V (1.2kV) | 51A (Tc) | 30mOhm @ 50A, 20V | 4.3V @ 20mA | 213.5nC @ 20V | 2420pF @ 800V | 119W (Tj) | -40°C ~ 175°C (TJ) | - | - | Chassis Mount | 22-PIM (33.8x42.5) |
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CAB011M12FM3TMOSFET 2N-CH 1200V 105A MODULE |
38 |
|
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- | Module | Box | Active | Silicon Carbide (SiC) | 2 N-Channel (Half Bridge) | - | 1200V (1.2kV) | 105A (Tj) | 14mOhm @ 100A, 15V | 3.6V @ 35mA | 324nC @ 15V | 10300pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |
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CCB032M12FM3TMOSFET 6N-CH 1200V 40A MODULE |
33 |
|
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- | Module | Box | Active | Silicon Carbide (SiC) | 6 N-Channel (3-Phase Bridge) | - | 1200V (1.2kV) | 40A (Tj) | 42.6mOhm @ 30A, 15V | 3.6V @ 11.5mA | 118nC @ 15V | 3400pF @ 800V | - | -40°C ~ 150°C (TJ) | - | - | Chassis Mount | Module |