Vishay Siliconix SQD50N04-4M5L_GE3
- Part No.:
- SQD50N04-4M5L_GE3
- Manufacturer:
- Vishay Siliconix
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
SQD50N04-4M5L_GE3.pdf
- Description:
- MOSFET N-CH 40V 50A TO252AA
- Quantity:
Unit Price:$0
Ext Price:$0
- Payment:
- Shipping:
SQD50N04-4M5L_GE3 Information
- Specifications
- Product Details
- Comparison
- Tags
- Product attributes
- Attribute value
- Manufacturer:
- Vishay Siliconix
- Series:
- -
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 40 V
- Current - Continuous Drain (Id) @ 25°C:
- 50A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 4.5V, 10V
- Rds On (Max) @ Id, Vgs:
- 3.5mOhm @ 20A, 10V
- Vgs(th) (Max) @ Id:
- 2.5V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 130 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 5860 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 136W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA
- Datasheet:
-
SQD50N04-4M5L_GE3.pdf
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| Part Number | SQD50N04-5M6_T4GE3 | SQD50N04-5M6L_GE3 | SQD50N04_4M5LT4GE3 | SQD50N04-5M6_GE3 | SQD50N04-09H-GE3 |
| Manufacturer | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix | Vishay Siliconix |
| Series | TrenchFET® | TrenchFET® | - | TrenchFET® | - |
| Package/Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Packaging | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Tape & Reel (TR) | Cut Tape (CT) |
| Product Status | Active | Obsolete | Active | Active | Obsolete |
| FET Type | N-Channel | N-Channel | N-Channel | N-Channel | N-Channel |
| Technology | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss) | 40 V | 40 V | 40 V | 40 V | 40 V |
| Current - Continuous Drain (Id) @ 25°C | 50A (Tc) | 50A (Tc) | 50A (Tc) | 50A (Tc) | 50A (Tc) |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | 4.5V, 10V | 4.5V, 10V | 10V | - |
| Rds On (Max) @ Id, Vgs | 5.6mOhm @ 20A, 10V | 5.6mOhm @ 20A, 10V | 3.5mOhm @ 20A, 10V | 5.6mOhm @ 20A, 10V | 9mOhm @ 20A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250µA | 2.5V @ 250µA | 2.5V @ 250µA | 3.5V @ 250µA | 5V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs | 85 nC @ 10 V | 75 nC @ 10 V | 130 nC @ 10 V | 85 nC @ 10 V | 76 nC @ 10 V |
| Vgs (Max) | ±20V | ±20V | ±20V | ±20V | - |
| Input Capacitance (Ciss) (Max) @ Vds | 4000 pF @ 25 V | 4000 pF @ 25 V | 5860 pF @ 25 V | 4000 pF @ 25 V | 4240 pF @ 25 V |
| FET Feature | - | - | - | - | - |
| Power Dissipation (Max) | 71W (Tc) | 71W (Tc) | 136W (Tc) | 71W (Tc) | - |
| Operating Temperature | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | -55°C ~ 175°C (TJ) | - |
| Grade | Automotive | Automotive | - | Automotive | - |
| Qualification | AEC-Q101 | AEC-Q101 | - | AEC-Q101 | - |
| Mounting Type | Surface Mount | Surface Mount | Surface Mount | Surface Mount | Surface Mount |
| Supplier Device Package | TO-252AA | TO-252AA | TO-252AA | TO-252AA | TO-252AA |
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