Vishay Siliconix IRF710

Part No.:
IRF710
Manufacturer:
Vishay Siliconix
Category:
FETs, MOSFETs
Package:
TO-220-3
Datasheet:
IC-MAX.COMIRF710.pdf
Description:
MOSFET N-CH 400V 2A TO220AB
Quantity:

Unit Price:$0

Ext Price:$0

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IRF710 Information

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Product attributes
Attribute value
Manufacturer:
Vishay Siliconix
Series:
-
Package/Case:
TO-220-3
Packaging:
Tube
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
400 V
Current - Continuous Drain (Id) @ 25°C:
2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
17 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
170 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
36W (Tc)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220AB
Datasheet:
IC-MAX.COMIRF710.pdf
Image IRF710PBF-BE3 IRF710SPBF IRF710STRLPBF IRF710L IRF710S
Part Number IRF710PBF-BE3 IRF710SPBF IRF710STRLPBF IRF710L IRF710S
Manufacturer Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix Vishay Siliconix
Series - - - - -
Package/Case TO-220-3 TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-263-3, D2PAK (2 Leads + Tab), TO-263AB TO-262-3 Long Leads, I2PAK, TO-262AA TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging Tube Tube Tape & Reel (TR) Tube Tube
Product Status Active Active Active Obsolete Obsolete
FET Type N-Channel N-Channel N-Channel N-Channel N-Channel
Technology MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide) MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 400 V 400 V 400 V 400 V 400 V
Current - Continuous Drain (Id) @ 25°C 2A (Tc) 2A (Tc) 2A (Tc) 2A (Tc) 2A (Tc)
Drive Voltage (Max Rds On, Min Rds On) - 10V 10V 10V 10V
Rds On (Max) @ Id, Vgs 3.6Ohm @ 1.2A, 10V 3.6Ohm @ 1.2A, 10V 3.6Ohm @ 1.2A, 10V 3.6Ohm @ 1.2A, 10V 3.6Ohm @ 1.2A, 10V
Vgs(th) (Max) @ Id 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 17 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V 17 nC @ 10 V
Vgs (Max) ±20V ±20V ±20V ±20V ±20V
Input Capacitance (Ciss) (Max) @ Vds 170 pF @ 25 V 170 pF @ 25 V 170 pF @ 25 V 170 pF @ 25 V 170 pF @ 25 V
FET Feature - - - - -
Power Dissipation (Max) 36W (Tc) 3.1W (Ta), 36W (Tc) 3.1W (Ta), 36W (Tc) - 3.1W (Ta), 36W (Tc)
Operating Temperature -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ) -55°C ~ 150°C (TJ)
Grade - - - - -
Qualification - - - - -
Mounting Type Through Hole Surface Mount Surface Mount Through Hole Surface Mount
Supplier Device Package TO-220AB TO-263 (D2PAK) TO-263 (D2PAK) I2PAK TO-263 (D2PAK)
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