Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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NXPSC16650B6JDIODE SIL CARBIDE 650V 16A D2PAK |
3,106 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 534pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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WNSC04650T6JDIODE SIL CARBIDE 650V 4A 5DFN |
4,442 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 4A | 1.7 V @ 4 A | No Recovery Time > 500mA (Io) | 0 ns | 25 µA @ 650 V | 141pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
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NXPSC12650B6JDIODE SIL CARBIDE 650V 12A D2PAK |
2,892 |
|
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- | TO-263-3, D2PAK (2 Leads + Tab), TO-263AB | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.7 V @ 12 A | No Recovery Time > 500mA (Io) | 0 ns | 80 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Surface Mount | D2PAK | 175°C (Max) |
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WNSC10650T6JDIODE SIL CARBIDE 650V 10A 5DFN |
7,135 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 328pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
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WNSC08650T6JDIODE SIL CARBIDE 650V 8A 5DFN |
8,999 |
|
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- | 4-VSFN Exposed Pad | Tape & Reel (TR) | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 50 µA @ 650 V | 267pF @ 1V, 1MHz | - | - | Surface Mount | 5-DFN (8x8) | 175°C (Max) |
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VS-C20CP07L-M3DIODE SIL CARB 650V 10A TO220AC |
5,592 |
|
- |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 55 µA @ 650 V | 430pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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VS-C16CP07L-M3DIODE SIL CARB 650V 16A TO220AC |
6,963 |
|
- |
- | TO-220-2 | Tube | Obsolete | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.7 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 85 µA @ 650 V | 320pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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SM4001-CTDIODE GP 50V 1A MELF DO-213AB |
8,040 |
|
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- | DO-213AB, MELF | Strip | Active | Standard | 50 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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P2500X-CTDIODE AVALANCHE 1.8KV 25A P600 |
9,312 |
|
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- | P600, Axial | Strip | Active | Avalanche | 1800 V | 25A | 1.1 V @ 25 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 1.8 V | - | - | - | Through Hole | P600 | -55°C ~ 175°C |
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1N4005GP-AQ-CTDIODE GEN PURP 600V 1A DO41 |
4,442 |
|
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- | DO-204AC, DO-41, Axial | Strip | Active | Standard | 600 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | - | - | Through Hole | DO-204AC (DO-41) | -50°C ~ 175°C |
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SM5406-CTDIODE GP 600V 3A MELF DO-213AB |
8,271 |
|
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- | DO-213AB, MELF | Strip | Active | Standard | 600 V | 3A | 1.2 V @ 3 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 600 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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SM4007-CTDIODE GP 1KV 1A MELF DO-213AB |
2,031 |
|
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- | DO-213AB, MELF | Strip | Active | Standard | 1000 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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BY550-50-CTDIODE GEN PURP 50V 5A DO201 |
7,342 |
|
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- | DO-201AA, DO-27, Axial | Strip | Active | Standard | 50 V | 5A | 1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 50 V | - | - | - | Through Hole | DO-201 | -50°C ~ 175°C |
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SM4003-CTDIODE GP 200V 1A MELF DO-213AB |
4,618 |
|
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- | DO-213AB, MELF | Strip | Active | Standard | 200 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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P600G-CTDIODE GEN PURP 400V 6A P600 |
7,066 |
|
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- | P600, Axial | Strip | Active | Standard | 400 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 400 V | - | - | - | Through Hole | P600 | -50°C ~ 150°C |
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SM4002-CTDIODE GP 100V 1A MELF DO-213AB |
3,475 |
|
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- | DO-213AB, MELF | Strip | Active | Standard | 100 V | 1A | 1.1 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | - | - | Surface Mount | DO-213AB (MELF) | -50°C ~ 175°C |
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GL34B-CTDIODE GP 100V 500MA DO213AA |
2,178 |
|
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- | DO-213AA | Strip | Active | Standard | 100 V | 500mA | 1.2 V @ 500 mA | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 100 V | - | - | - | Surface Mount | DO-213AA (MINIMELF) | -50°C ~ 175°C |
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P600B-CTDIODE GEN PURP 100V 6A P600 |
6,465 |
|
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- | P600, Axial | Strip | Active | Standard | 100 V | 6A | 1.1 V @ 6 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 10 µA @ 100 V | - | - | - | Through Hole | P600 | -50°C ~ 175°C |
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BY550-200-CTDIODE GEN PURP 200V 5A DO201 |
7,792 |
|
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- | DO-201AA, DO-27, Axial | Strip | Active | Standard | 200 V | 5A | 1 V @ 5 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 200 V | - | - | - | Through Hole | DO-201 | -50°C ~ 175°C |
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BY133-CTDIODE GEN PURP 1.3KV 1A DO41 |
9,567 |
|
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- | DO-204AC, DO-41, Axial | Strip | Active | Standard | 1300 V | 1A | 1.3 V @ 1 A | Standard Recovery >500ns, > 200mA (Io) | 1.5 µs | 5 µA @ 1.3 V | - | - | - | Through Hole | DO-204AC (DO-41) | -50°C ~ 175°C |