制造商 | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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P3D06008I2DIODE SIL CARB 650V 21A TO220I-2 PN Junction Semiconductor |
3,691 | - |
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P3D | TO-220I-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 21A | - | No Recovery Time > 500mA (Io) | 0 ns | 36 µA @ 650 V | - | - | - | - | TO-220I-2 | -55°C ~ 175°C |