Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PCDF0865G1_T0_00601650V/8A THROUGH HOLE SILICON CAR Panjit International Inc. |
2,000 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.7 V @ 8 A | No Recovery Time > 500mA (Io) | 0 ns | 60 µA @ 650 V | 300pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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PCDP0865GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 8A | 1.6 V @ 8 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 372pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDP1065GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
1,961 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.8 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 271pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDD1065GB_L2_00601650V/10A IN TO-252AA PACKAGE SIL Panjit International Inc. |
3,000 |
|
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 100 µA @ 650 V | 610pF @ 1V, 1MHz | - | - | Surface Mount | TO-252AA | -55°C ~ 175°C |
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PCDF1065G1_T0_00601650V/10A THROUGH HOLE SILICON CA Panjit International Inc. |
2,000 |
|
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- | TO-220-2 Full Pack, Isolated Tab | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.7 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | 70 µA @ 650 V | 380pF @ 1V, 1MHz | - | - | Through Hole | ITO-220AC | -55°C ~ 175°C |
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PCDP1065GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
1,975 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 10A | 1.6 V @ 10 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 446pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDP1265GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.8 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 372pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDP15120GB_T0_00601SIC DIODE 1200V/15A IN TO-220AC Panjit International Inc. |
2,000 |
|
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- | - | Tube | Active | - | - | - | - | - | - | - | - | - | - | - | - | - |
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PCDP1265GB_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 12A | 1.6 V @ 12 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 529pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |
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PCDP1665GC_T0_00601650V SIC SCHOTTKY BARRIER DIODE Panjit International Inc. |
2,000 |
|
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- | TO-220-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 650 V | 16A | 1.8 V @ 16 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 650 V | 446pF @ 1V, 1MHz | - | - | Through Hole | TO-220AC | -55°C ~ 175°C |