Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
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JANTXV1N1204ARDIODE GP REV 400V 12A DO203AA Microchip Technology |
174 |
|
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- | DO-203AA, DO-4, Stud | Bulk | Active | Standard, Reverse Polarity | 400 V | 12A | 1.35 V @ 38 A | Standard Recovery >500ns, > 200mA (Io) | - | 5 µA @ 400 V | - | Military | MIL-PRF-19500/260 | Chassis, Stud Mount | DO-203AA (DO-4) | -65°C ~ 150°C |
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JANS1N3595USDIODE GEN PURP 200MA B SQ-MELF Microchip Technology |
361 |
|
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- | SQ-MELF, B | Bulk | Active | Standard | - | 200mA | 1 V @ 200 mA | Small Signal =< 200mA (Io), Any Speed | 3 µs | 1 nA @ 125 V | - | Military | MIL-S-19500-241 | Surface Mount | B, SQ-MELF | -65°C ~ 150°C |
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1N4045DIODE GP 100V 275A DO205AB DO9 Microchip Technology |
87 |
|
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- | DO-205AB, DO-9, Stud | Bulk | Active | Standard | 100 V | 275A | 1.3 V @ 300 A | Standard Recovery >500ns, > 200mA (Io) | - | 15 mA @ 100 V | - | - | - | Stud Mount | DO-205AB (DO-9) | -65°C ~ 190°C |
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UPS120E3/TR7DIODE SCHOTTKY 20V 1A POWERMITE1 Microchip Technology |
308 |
|
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- | DO-216AA | Tape & Reel (TR) | Active | Schottky | 20 V | 1A | 450 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 400 µA @ 20 V | - | - | - | Surface Mount | Powermite 1 (DO216-AA) | -55°C ~ 125°C |
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JANTX1N5623USDIODE GEN PURP 1KV 1A D-5A Microchip Technology |
34 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 1000 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 500 ns | 500 nA @ 1000 V | 15pF @ 12V, 1MHz | Military | MIL-PRF-19500/429 | Surface Mount | D-5A | -65°C ~ 175°C |
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JANTX1N5819UR-1DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
66 |
|
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- | DO-213AB, MELF (Glass) | Bag | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | Military | MIL-PRF-19500/586 | Surface Mount | DO-213AB (MELF, LL41) | -65°C ~ 125°C |
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JANS1N5806USDIODE GEN PURP 150V 1A D-5A Microchip Technology |
38 |
|
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- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Surface Mount | D-5A | -65°C ~ 175°C |
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MSC050SDA120BCTDIODE SIC 1.2KV 109A TO247-3 Microchip Technology |
39 |
|
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- | TO-247-3 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 109A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1200 V | 246pF @ 400V, 1MHz | - | - | Through Hole | TO-247-3 | -55°C ~ 175°C |
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MSC050SDA170BDIODE SIC 1.7KV 136A TO247-2 Microchip Technology |
48 |
|
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- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1700 V | 136A | 1.8 V @ 50 A | No Recovery Time > 500mA (Io) | 0 ns | 200 µA @ 1700 V | 4450pF @ 1V, 1MHz | - | - | Through Hole | TO-247 | -55°C ~ 175°C |
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APT15DQ60KGDIODE GP 600V 15A TO220 Microchip Technology |
477 |
|
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- | TO-220-2 | Tube | Active | Standard | 600 V | 15A | 2.4 V @ 15 A | Fast Recovery =< 500ns, > 200mA (Io) | 19 ns | 25 µA @ 600 V | - | - | - | Through Hole | TO-220-2 | -55°C ~ 175°C |