Photo | Mfr. Part # | Availability | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | Technology | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Capacitance @ Vr, F | Grade | Qualification | Mounting Type | Supplier Device Package | Operating Temperature - Junction |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
![]() |
CD5819DIODE SCHOTTKY 40V 1A DIE Microchip Technology |
392 |
|
![]() |
- | Die | Bulk | Active | Schottky | 40 V | 1A | 600 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 100 µA @ 40 V | - | Military | MIL-PRF-19500/586 | Surface Mount | Die | -55°C ~ 125°C |
![]() |
MSC010SDA120BDIODE SIL CARB 1.2KV 10A TO247 Microchip Technology |
1,511 |
|
![]() |
- | TO-247-2 | Tube | Active | SiC (Silicon Carbide) Schottky | 1200 V | 10A | 1.5 V @ 10 A | No Recovery Time > 500mA (Io) | 0 ns | - | - | - | - | Through Hole | TO-247 | - |
![]() |
JAN1N5552DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
152 |
|
![]() |
- | B, Axial | Bulk | Active | Standard | 600 V | 3A | 1.2 V @ 9 A | Standard Recovery >500ns, > 200mA (Io) | 2 µs | 1 µA @ 600 V | - | Military | MIL-PRF-19500/420 | Through Hole | B, Axial | -65°C ~ 175°C |
![]() |
1N5619DIODE GEN PURP 600V 1A AXIAL Microchip Technology |
301 |
|
![]() |
- | A, Axial | Bulk | Active | Standard | 600 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 250 ns | 500 nA @ 600 V | 25pF @ 12V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
![]() |
1N5806E3DIODE GEN PURP 150V 1A A AXIAL Microchip Technology |
123 |
|
![]() |
- | Axial | Bulk | Active | Standard | 150 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Through Hole | A, Axial | -65°C ~ 175°C |
![]() |
APT60D100BGDIODE GEN PURP 1KV 60A TO247 Microchip Technology |
839 |
|
![]() |
- | TO-247-2 | Tube | Active | Standard | 1000 V | 60A | 2.5 V @ 60 A | Fast Recovery =< 500ns, > 200mA (Io) | 280 ns | 250 µA @ 1000 V | - | - | - | Through Hole | TO-247 [B] | -55°C ~ 175°C |
![]() |
1N5806USE3DIODE GEN PURP 150V 1A D-5A Microchip Technology |
148 |
|
![]() |
- | SQ-MELF, A | Bulk | Active | Standard | 150 V | 1A | 975 mV @ 2.5 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 150 V | 25pF @ 10V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
|
CDLL5819DIODE SCHOTTKY 45V 1A DO213AB Microchip Technology |
144 |
|
![]() |
- | DO-213AB, MELF | Bulk | Active | Schottky | 45 V | 1A | 490 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | - | 50 µA @ 45 V | 70pF @ 5V, 1MHz | - | - | Surface Mount | DO-213AB | -65°C ~ 125°C |
![]() |
1N5617USDIODE GEN PURP 400V 1A D-5A Microchip Technology |
608 |
|
![]() |
- | SQ-MELF, A | Bulk | Active | Standard | 400 V | 1A | 1.6 V @ 3 A | Fast Recovery =< 500ns, > 200mA (Io) | 150 ns | 500 nA @ 400 V | 35pF @ 12V, 1MHz | - | - | Surface Mount | D-5A | -65°C ~ 175°C |
![]() |
JANTX1N5804DIODE GEN PURP 100V 1A AXIAL Microchip Technology |
148 |
|
![]() |
- | A, Axial | Bulk | Active | Standard | 100 V | 1A | 875 mV @ 1 A | Fast Recovery =< 500ns, > 200mA (Io) | 25 ns | 1 µA @ 100 V | 25pF @ 10V, 1MHz | Military | MIL-PRF-19500/477 | Through Hole | A, Axial | -65°C ~ 175°C |