制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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TSM70N600CP700V, 8A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
4,035 | - |
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- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM70N600CH700V, 8A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
6,971 | - |
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- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 700 V | 8A (Tc) | 10V | 600mOhm @ 2.4A, 10V | 4V @ 250µA | 12.6 nC @ 10 V | ±30V | 743 pF @ 100 V | - | 83W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM60N900CP ROGMOSFET N-CH 600V 4.5A TO252 Taiwan Semiconductor Corporation |
9,165 | - |
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- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 600 V | 4.5A (Tc) | 10V | 900mOhm @ 2.3A, 10V | 4V @ 250µA | 9.7 nC @ 10 V | ±30V | 480 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM70N900CP ROGMOSFET N-CH 700V 4.5A TO252 Taiwan Semiconductor Corporation |
7,670 | - |
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- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 700 V | 4.5A (Tc) | 10V | 900mOhm @ 1.5A, 10V | 4V @ 250µA | 9.7 nC @ 10 V | ±30V | 482 pF @ 100 V | - | 50W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM80N1R2CP800V, 5.5A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation |
6,857 | - |
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- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM80N1R2CH800V, 5.5A, SINGLE N-CHANNEL POW Taiwan Semiconductor Corporation |
4,923 | - |
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- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 5.5A (Tc) | 10V | 1.2Ohm @ 2.75A, 10V | 4V @ 250µA | 19.4 nC @ 10 V | ±30V | 685 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM80N400CF C0GMOSFET N-CH 800V 12A ITO220S Taiwan Semiconductor Corporation |
6,240 | - |
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- | TO-220-3 Full Pack | Tube | Obsolete | N-Channel | MOSFET (Metal Oxide) | 800 V | 12A (Tc) | 10V | 400mOhm @ 2.7A, 10V | 4V @ 250µA | 51 nC @ 10 V | ±30V | 1848 pF @ 100 V | - | 69W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | ITO-220S |
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TSM80N950CP800V, 6A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
7,221 | - |
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- |
- | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | TO-252 (DPAK) |
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TSM80N950CH800V, 6A, SINGLE N-CHANNEL POWER Taiwan Semiconductor Corporation |
4,807 | - |
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- |
- | TO-251-3 Short Leads, IPAK, TO-251AA | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 800 V | 6A (Tc) | 10V | 950mOhm @ 3A, 10V | 4V @ 250µA | 19.6 nC @ 10 V | ±30V | 691 pF @ 100 V | - | 110W (Tc) | -55°C ~ 150°C (TJ) | - | - | Through Hole | TO-251 (IPAK) |
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TSM650N15CS RLGMOSFET N-CHANNEL 150V 9A 8SOP Taiwan Semiconductor Corporation |
9,994 | - |
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- |
- | 8-SOIC (0.154", 3.90mm Width) | Tape & Reel (TR) | Obsolete | N-Channel | MOSFET (Metal Oxide) | 150 V | 9A (Tc) | 6V, 10V | 65mOhm @ 4A, 10V | 4V @ 250µA | 37 nC @ 10 V | ±20V | 1783 pF @ 75 V | - | 12.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | 8-SOP |