FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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PMN70XPEA115MOSFET P-CH 20V 3.2A NXP USA Inc. |
8,902 | - |
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Datasheet
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* | - | Bulk | Active | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - | - |
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NX3008PBKMB,315MOSFET P-CH 30V 300MA DFN1006B-3 NXP USA Inc. |
5,803 | - |
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Datasheet
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TrenchMOS™ | SC-101, SOT-883 | Bulk | Active | P-Channel | MOSFET (Metal Oxide) | 30 V | 300mA (Ta) | - | 4.1Ohm @ 200mA, 4.5V | 1.1V @ 250µA | 0.72 nC @ 4.5 V | ±8V | 46 pF @ 15 V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN1006B-3 |
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NX3008NBKMB315NOW NEXPERIA NX3008NBKMB SMALL S NXP USA Inc. |
4,035 | - |
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Datasheet
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- | SC-101, SOT-883 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 530mA (Ta) | 1.8V, 4.5V | 1.4Ohm @ 350mA, 4.5V | 1.1V @ 250µA | 0.68 nC @ 4.5 V | ±8V | 50 pF @ 15 V | - | 360mW (Ta), 2.7W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN1006B-3 |
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PMPB13XNE,115MOSFET N-CH 30V 8A DFN2020MD-6 NXP USA Inc. |
6,716 | - |
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Datasheet
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- | 6-XFDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 8A (Ta) | 1.8V, 4.5V | 16mOhm @ 8A, 4.5V | 900mV @ 250µA | 36 nC @ 4.5 V | ±12V | 2195 pF @ 15 V | - | 1.7W (Ta), 12.5W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN1010B-6 |
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PMPB33XN,115MOSFET N-CH 30V 4.3A DFN2020MD-6 NXP USA Inc. |
3,235 | - |
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Datasheet
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- | 6-XFDFN Exposed Pad | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 30 V | 4.3A (Ta) | 2.5V, 4.5V | 47mOhm @ 4.3A, 4.5V | 1.2V @ 250µA | 7.6 nC @ 4.5 V | ±12V | 505 pF @ 15 V | - | 1.5W (Ta), 8.3W (Tc) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | DFN1010B-6 |
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PSMN5R0-100PS,127NOW NEXPERIA PSMN5R0-100PS - 120 NXP Semiconductors |
8,850 | - |
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Datasheet
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- | TO-220-3 | Bulk | Active | N-Channel | MOSFET (Metal Oxide) | 100 V | 120A (Tc) | 10V | 5mOhm @ 25A, 10V | 4V @ 1mA | 170 nC @ 10 V | ±20V | 9900 pF @ 50 V | - | 338W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-220AB |
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