FETs, MOSFETs
| 制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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结果:
| Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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N3T080MP120D1200 V, 38A SIC MOSFET, TO-247 NoMIS Power |
1,005 | - |
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Datasheet
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1200 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 38A | 20V | 100mOhm @ 15A, 20V | 3V @ 15mA | 53 nC @ 20 V | +20V, -5V | 896 pF @ 800 V | - | 188W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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N3T035MP120D1200 V, 76A SIC MOSFET, TO-247 NoMIS Power |
652 | - |
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Datasheet
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1200 | TO-247-3 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1200 V | 76A | 20V | 45mOhm @ 30A, 20V | 3V @ 15mA | 126 nC @ 20 V | +20V, -5V | 2204 pF @ 800 V | - | 319W (Tc) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-3L |
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