制造商 | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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Photo | Mfr. Part # | Availability | Price | Quantity | Datasheet | Series | Package/Case | Packaging | Product Status | FET Type | Technology | Drain to Source Voltage (Vdss) | Current - Continuous Drain (Id) @ 25°C | Drive Voltage (Max Rds On, Min Rds On) | Rds On (Max) @ Id, Vgs | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Vgs (Max) | Input Capacitance (Ciss) (Max) @ Vds | FET Feature | Power Dissipation (Max) | Operating Temperature | Grade | Qualification | Mounting Type | Supplier Device Package |
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MDD2301MOSFET P-CH -20V -3.0A SOT23 NextGen Components |
210,000 | - |
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MDD | SOT-23-3 | Tape & Reel (TR) | Active | P-Channel | MOSFET (Metal Oxide) | 20 V | 3A | 2.5V, 4.5V | 90mOhm @ 3A, 4.5V | 1V @ 250µA | 6.6 nC @ 2.5 V | ±12V | 330 pF @ 10 V | - | 1.2W (Ta) | -55°C ~ 150°C (TJ) | - | - | Surface Mount | SOT-23 |
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TO252MDD4N65DSMOSFET TO-252 N 650V 4A NextGen Components |
31,014 | - |
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TO-252 | - | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 2.8Ohm @ 2A, 10V | - | 12 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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TO252MDD7N65DSMOSFET TO-252 N 650V 7A NextGen Components |
76,401 | - |
|
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TO-252 | - | Tape & Reel (TR) | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | - | 20.7 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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TO220FMDD4N65FMOSFET TO-220F N 650V 4A NextGen Components |
22,550 | - |
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TO-220F | - | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 4A (Tc) | 10V | 2.8Ohm @ 2A, 10V | - | 12 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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TO220FMDD7N65FMOSFET TO-220F N 650V 7A NextGen Components |
30,905 | - |
|
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TO-220F | - | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 7A (Tc) | 10V | 1.4Ohm @ 3.5A, 10V | - | 20.7 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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TO220FMD10N65FMOSFET TO-220F N 650V 10A NextGen Components |
19,255 | - |
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TO-220F | - | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 10A (Tc) | 10V | 1Ohm @ 5A, 10V | - | 34.2 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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TO220FMD12N65FMOSFET TO-220F N 650V 12A NextGen Components |
6,750 | - |
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TO-220F | - | Tube | Active | N-Channel | MOSFET (Metal Oxide) | 650 V | 12A (Tc) | 10V | 0.8Ohm @ 6A, 10V | - | 41.9 nC @ 10 V | ±30V | - | - | - | - | - | - | - | - |
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NC1M120C35HTNGSIC MOSFET 1200V 35M 75A TO247- NextGen Components |
100 | - |
|
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NC1M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 75A (Tc) | - | 50mOhm @ 33.3A, 18V | 4.5V @ 15mA | 190 nC @ 18 V | +18V, -5V | 2834 pF @ 1 kV | - | 386W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |
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NC2M120C20HTNGSIC MOSFET 1200V 20M 126A TO247 NextGen Components |
100 | - |
|
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NC2M | TO-247-4 | Tube | Active | N-Channel | SiCFET (Silicon Carbide) | 1.2 kV | 126A (Tc) | - | 30mOhm @ 63A, 20V | 4.5V @ 20mA | 282 nC @ 20 V | +20V, -5V | 4615 pF @ 1 kV | - | 625W (Ta) | -55°C ~ 175°C (TJ) | - | - | Through Hole | TO-247-4L |